| 摘要 |
<p>PURPOSE:To extremely reduce internal inductance of a semiconductor device for a large power which is used by switching a large current at a high speed. CONSTITUTION:This embodiment comprises: a first conductor 11 secured to a radiate plate; a first insulating layer 13 secured to this conductor; a second conductor 15 secured thereto; a semiconductor element secured thereto and a second insulating layer 23; a third conductor 15 secured thereto; a fourth conductor 17 by which a surface electrode of the semiconductor element is electrically connected with the conductor 15; a first power terminal 3 secured to the conductor 15; and a second power terminal 5 secured to the conductor 15. In order to make small its internal inductance, these power terminals are constituted of a flat board having a width longer than a height and in parallel to and close to each other, and so that directions of a main current flowing within the power terminal may be reverse to each other, and so that the directions of the main current flowing within the conductor 15 and the main current flowing within the conductor 17 may be reversed to each other.</p> |
