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发明名称
Verfahren zur Herstellung von Isolierbereichen in einer Halbleitereinrichtung
摘要
申请公布号
DE4112045(C2)
申请公布日期
1994.03.10
申请号
DE19914112045
申请日期
1991.04.12
申请人
MITSUBISHI DENKI K.K., TOKIO/TOKYO, JP
发明人
MORIHARA, TOSHINORI, ITAMI, HYOGO, JP
分类号
H01L21/76;H01L21/027;H01L21/20;H01L21/336;H01L21/762;H01L21/763;H01L29/78;(IPC1-7):H01L21/76;H01L27/088
主分类号
H01L21/76
代理机构
代理人
主权项
地址
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