发明名称 |
Verfahren zur Herstellung einer Maske |
摘要 |
The present invention relates to a method for fabrication of a mask capable of stabilizing the size and the thickness thereof. A method for fabrication of a mask according to the present invention comprises a step for successively depositing an oxide layer and a Cr layer on a quartz plate, a step for successively etching said oxide layer and said Cr layer by an E-beam, and a step for extending said oxide in volume by an oxidation process to form a phase-shifter. Therefore, the size and thickness of a mask can easily be controlled by using an oxide instead of PMMA of the photosensitive film as a phase-shifter and endurability of a mask can be improved. |
申请公布号 |
DE4200647(C2) |
申请公布日期 |
1994.03.10 |
申请号 |
DE19924200647 |
申请日期 |
1992.01.13 |
申请人 |
GOLD STAR ELECTRON CO., LTD., CHUNGCHEONGBUK, KR |
发明人 |
KIM, HONG SEUK, SEOUL/SOUL, KR |
分类号 |
G03F1/08;G03F1/00;G03F1/29;G03F1/68;G03F1/80;H01L21/00;H01L21/027;H01L21/30;(IPC1-7):G03F1/08;G03F1/14 |
主分类号 |
G03F1/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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