Verfahren zur Obenflächenbehandlung eines Halbleiterplättchens.,申请号DE19883887477-传众专利搜索

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发明名称	Verfahren zur Obenflächenbehandlung eines Halbleiterplättchens.
摘要
申请公布号	DE3887477(D1)	申请公布日期	1994.03.10
申请号	DE19883887477	申请日期	1988.11.25
申请人	KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP;TOSHIBA MICRO-COMPUTER ENGINEERING CORP., KAWASAKI, JP	发明人	MIYASHITA, MORIYA C/O PATENT DIVISION, MINATO-KU TOKYO 105, JP;YOSHII, SHINTARO C/O PATENT DIVISION, MINATO-KU TOKYO 105, JP;SAKUMA, KEIKO, SHINAGAWA-KU TOKYO, JP
分类号	H01L21/00;H01L21/304;H01L21/322;(IPC1-7):H01L21/322	主分类号	H01L21/00
代理机构		代理人
主权项
地址

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