| 摘要 |
<p>PURPOSE:To enable low-power high-speed actions by using a normally-off type punching through bipolar transistor as a driver transistor to load with a normally-on type electrostatic induction transistor. CONSTITUTION:A normally-off type punching through BPT (bipolar transistor) and a normally-on type SIT (electrostatic induction transistor) are constructed on the same substrate 17 so that the gap between base regions 14, 16 of the normally-off punching through BPT and the gate gap of the normally-on type STI may be almost equal. A collector region of the normally-off type punching through BPT and a source region of the normally-on type SIT are shared by using a buried region 11 provided in the substrate 17. This design can increase component density and make low-power high-speed actions.</p> |
