发明名称 Monolithic structure comprising two sets of bidirectional protection diodes
摘要 A monolithic structure comprises two sets of bidirectional diodes having distinct characteristics constituted from a substrate (1) of a first (N-) conductivity type. First regions (10, 11, 12) of the second conductivity type constitute the first set of diodes between a first metallization (30) coating one of the first regions and second metallizations (31, 32) coating the other first regions. In a well (15) of the second conductivity type, second regions (20, 21, 22) of the first conductivity type constitute the second set of diodes between a third metallization (40) coating one of the second regions and fourth metallizations (41, 42) coating the other second regions.
申请公布号 US5293063(A) 申请公布日期 1994.03.08
申请号 US19920834052 申请日期 1992.02.11
申请人 SGS-THOMSON MICROELECTRONICS S.A. 发明人 ANCEAU, CHRISTINE
分类号 H01L29/866;H01L27/02;(IPC1-7):H01L29/06 主分类号 H01L29/866
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