发明名称 |
Method for producing a distributed feedback semiconductor laser device |
摘要 |
In a first crystal growth step, a first cladding layer, an active layer, and an optical wave-guide layer are sequentially grown on a semiconductor substrate. A diffraction grating is formed at a surface of the optical waveguide layer. In a second crystal growth step, a current block layer is grown on the optical waveguide layer having the diffraction grating. The current block layer is selectively etched to expose the diffraction grating and thus to form a stripe groove. In a third crystal growth step, a second cladding layer is grown on the diffraction grating inside the stripe groove and on the current block layer.
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申请公布号 |
US5292685(A) |
申请公布日期 |
1994.03.08 |
申请号 |
US19920919665 |
申请日期 |
1992.07.24 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
INOGUCHI, KAZUHIKO;SUGAHARA, SATOSHI;TANEYA, MOTOTAKA;KUDO, HIROAKI;NAKANISHI, CHITOSE;TAKIGUCHI, HARUHISA |
分类号 |
H01S5/12;H01S5/223;(IPC1-7):H01L21/203 |
主分类号 |
H01S5/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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