| 摘要 |
A semiconductor memory device comprises a memory cell for storing a binary data, a first reference cell storing a first logic level of a binary data, a second reference cell storing a second logic level of a binary data, a first load circuit connected to the memory cell, a second load circuit connected to the first reference cell, a third load circuit connected to the second reference cell, and a data detection circuit for detecting the stored data of the memory cell by comparing an output from the first load circuit with the outputs from the second and third load circuits.
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