| 摘要 |
The structural body of a ferroelectric capacitor C is located over a source region (23) between a gate electrode (22) and a local oxide film (26). The structural body has a ferroelectric film (29) and an upper electrode (30) and a lower electrode (31) for sandwiching the ferroelectric film (29), and is provided with a conductive oxide film (32) between the lower electrode (31) and the source region (23). The conductive oxide film (32) is ITO, ReO2, RuO2 or MoO3. If an oxygen anneal is conducted after forming the ferroelectric film (29) for the purpose of reforming crystallizability of the ferroelectric film (29), oxygen enters into the conductive oxide film (32) to some extent. As a result, the conductive oxide film (32) is further oxidized, and becomes a so-called oxide barrier or dummy layer. Therefore, formation of a silicon oxide film hardly occurs on the source interface, reduction of contact resistance and avoidance of series parasitic capacitance can be attained, the degree of freedom of the capacitor C forming region is increased, and a high density integration can be schemed.
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