发明名称 |
Process for preparing superconducting junction of oxide superconductor |
摘要 |
Improvement in a process for fabricating a superconducting junction by depositing successively a first oxide superconductor thin layer, a non-superconducting intermediate thin film layer and a second oxide superconductor thin film layer on a substrate in this order. In the invention, the non-superconducting intermediate thin film layer is composed of MgO and the substrate is preheated at 600 degrees-650 degrees C. for at least 5 minutes in the presence of O2, and is heated at a temperature between 200 degrees and 400 degrees C. during the non-superconducting intermediate thin film layer is deposited.
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申请公布号 |
US5292718(A) |
申请公布日期 |
1994.03.08 |
申请号 |
US19920957639 |
申请日期 |
1992.10.06 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
TANAKA, SABURO;NAKANISHI, HIDENORI;ITOZAKI, HIDEO;MATSUURA, TAKASHI |
分类号 |
H01L39/24;(IPC1-7):B05D5/12 |
主分类号 |
H01L39/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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