| 摘要 |
PURPOSE:To obtain a sintered compact of ITO having high thermal conductivity, folding resistance and sputtering rate free from cracking of target by specifically controlling sintering density, diameter of sintered particle and content of (In0.5 Sn0.4)2O3. CONSTITUTION:Mixed powder or coprecipitated powder comprising indium oxide powder and tin oxide powder having fineness and high dispersion in a given ratio is prepared. Then the powder is molded by cold static pressure press and sintered at about 1,250-1,600 deg.C. Consequently, a sintered compact of ITO having 90-100% sintering density, 1-20mum diameter of sintered particle and the amount of (In0.5Sn0.4)2O3 of <=10% is obtained. A sputtering target using the obtained sintered compact of ITO has a specific resistance of <=1X10<-3>cm, causes non nodule on the surface of the target and in particular, can provide a transparent electrically conductive film having extremely low resistance on a substrate at a relatively low temperature of room temperature-200 deg.C. |
