| 摘要 |
A semiconductor device is disclosed in which a groove type element isolation region in the surroundings of a first diffused layer of one conductivity type formed on the surface of a silicon substrate of the opposite conductivity type, an insulating film is embedded in the groove type element isolation region, and an interlayer insulating film is provided on the silicon substrate. A contact hole for connecting the first diffused layer to a metallic wiring is provided at a position that straddles the boundary between the first diffused layer and the groove type element isolation region, the insulating film embedded in the groove type element isolation region is exposed in a part of the bottom face of the contact hole, and the silicon substrate including the first diffused layer is exposed on the side face of the contact hole. On the surface of the silicon substrate exposed to the contact hole there is formed a second diffused layer of the one conductivity type, and this diffused layer is connected to the first diffused layer. Because of the structure as described in the above, the increase in the contact resistance between the first and the second diffused layer, and the metallic wiring can be suppressed even if the aperture of the contact hole is decreased. Moreover, it becomes unnecessary to provide a space between the contact hole and the groove type element isolation region so that it becomes possible to reduce the area of the first diffused layer, and it is effective to enhance the operating speed due to the increase in the integration of the semiconductor device and to the decrease in the junction capacitance.
|
