发明名称 |
Semiconductor memory device and method for manufacturing the same |
摘要 |
A semiconductor memory device has a memory cell composed of a select MOS transistor and information storage capacitor and a peripheral circuit composed of a MOS transistor formed at a peripheral side of the memory cell, these transistors being formed in the surface portion of a first conductivity type semiconductor substrate. In the semiconductor memory device, the gate oxide film of the select MOS transistor is different in thickness from the gate oxide film of the MOS transistor of the peripheral circuit, the gate electrodes of these transistors being simultaneously formed.
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申请公布号 |
US5293336(A) |
申请公布日期 |
1994.03.08 |
申请号 |
US19910784519 |
申请日期 |
1991.10.29 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
ISHII, TAKEAKI;MAEDA, SATOSHI |
分类号 |
H01L27/10;G11C11/401;G11C11/407;H01L21/8234;H01L21/8242;H01L27/105;H01L27/108;(IPC1-7):H01L21/72 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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