发明名称 Photoswitching device including a MOSFET for detecting zero voltage crossing
摘要 A switching device includes a thyristor and a MOSFET, and a voltage clamp circuit. The voltage clamp circuit includes an N+ type contact region formed in a surface layer of a N type substrate and electrically connected to a gate electrode of a MOSFET, and a P type guard ring surrounding the contact region.
申请公布号 US5293051(A) 申请公布日期 1994.03.08
申请号 US19930016546 申请日期 1993.02.11
申请人 SHARP KABUSHIKI KAISHA 发明人 MARIYAMA, MITSURU;KATO, NOBUYUKI
分类号 H01L29/74;H01L29/745;H01L29/747;H01L29/749;H01L29/87;(IPC1-7):H01L29/74;H01L27/02;H01L29/34 主分类号 H01L29/74
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