PRODUCTION OF N-DOPED SILICON SINGLE CRYSTAL,申请号JP19920242778-传众专利搜索

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发明名称	PRODUCTION OF N-DOPED SILICON SINGLE CRYSTAL
摘要
申请公布号	JPH0664914(A)	申请公布日期	1994.03.08
申请号	JP19920242778	申请日期	1992.08.19
申请人	MITSUBISHI CORP	发明人	TAKAHASHI AKIRA
分类号	C01B33/02;H01L21/26;(IPC1-7):C01B33/02	主分类号	C01B33/02
代理机构		代理人
主权项
地址

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