| 摘要 |
An improved method of planarizing a side surface of a partially completed integrated circuit device comprises, in sequence, the steps of depositing on the side surface a spin-on glass coating; partially curing the coating; back etching the coating to remove portions thereof which overlie insulation-encapsulated electrically conductive portions of the device; and then subjecting the remaining coating portions, which are disposed within and level off previously depressed portions of the side surface, to an oxygen plasma final curing process, preferably utilizing a downstream stripper type oxygen plasma generator. By performing the back etching step prior to the oxygen plasma curing step, undesirable cracking of the remaining coating portions is advantageously avoided.
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