发明名称 |
Method of making a stacked semiconductor nonvolatile memory device |
摘要 |
This invention is directed to a process for the fabrication of a stacked semiconductor nonvolatile memory device, which process is adapted to define a longitudinal length of a floating gate in self-alignment with overlying control gate and interlayer insulating film by etching, without severely damaging the underlying semiconductor substrate.
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申请公布号 |
US5290721(A) |
申请公布日期 |
1994.03.01 |
申请号 |
US19920874808 |
申请日期 |
1992.04.28 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
YOSHIMI, MASANORI;YAMAUCHI, YOSHIMITSU;OMORI, KIYOSHIGE |
分类号 |
H01L21/8247;H01L21/336;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/266 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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