Electrically programmable read only memory device with timing detector for increasing address decoding signal

摘要

An electrically programmable read only memory device in a read-out mode of operation lifts one of the word lines to a read-out voltage level higher than an external power voltage level to see whether or not a designated floating gate type memory transistor provides a conductive channel, and the selected word line is firstly lifted to a first predetermined voltage level with a power voltage line, then being further lifted to the read-out voltage level supplied from a step-up circuit, wherein a monitoring unit is provided for the word lines for detecting the first predetermined voltage level so that an address set-up period is minimized without margin for fluctuation of process parameters.