| 摘要 |
PURPOSE:To provide a high density ITO sintered compact capable of giving an electric conductive transparent film having low specific resistance by sintering a special compsn. contg. WO3 and Bi2O3. CONSTITUTION:Indium oxide is mixed with 0.05-25wt.% tin oxide and calcined at 400-1,500 deg.C to obtain ITO powder and WO3 and Bi2O3 are added to this ITO powder so as to regulate the WO3 and Bi2O3 contents to the region defined by points 7 in figure (0.4wt.% WO3, 8.5wt.% Bi2O3), 8 (1.8wt.% WO3, 8.5wt.% Bi2O3), 9 (10.0wt.% WO3 1-4wt.% Bi2O3, 10 (10.0wt.% WO3, 0.01wt.% Bi2O3) and 11 (0.4wt.% WO3, 0.01wt.% Bi2O3) in the WO3-Bi2O3 two-component diagram. They are granulated and sintered at 1,200-1,600 deg.C to obtain the objective ITO sintered compact whose relative density is >=80% of theoretical density. |
