发明名称 |
Method of manufacturing semiconductor devices including depositing aluminum on aluminum leads |
摘要 |
A method of manufacturing semiconductor devices comprises steps of selectively forming metal leads on the surface a semiconductor substrate, and immersing the semiconductor substrate in a solution containing dissolved metal for depositing the dissolved metal on the surfaces of the metal leads. The solution contains dissolved metal having an ionization tendency equal to or smaller than ionization of the metal leads.
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申请公布号 |
US5290733(A) |
申请公布日期 |
1994.03.01 |
申请号 |
US19920925287 |
申请日期 |
1992.08.06 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
HAYASAKA, NOBUO;SHIMAZAKI, AYAKO;OKANO, HARUO |
分类号 |
H01L21/288;H01L21/768;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/288 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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