Method of making complementary heterostructure field effect transistors

摘要

Complementary heterostructure field effect transistors (30) with complementary devices having complementary gates (40, 50) and threshold adjusting dopings are disclosed. Preferred embodiment devices include a p+ gate (50) formed by diffusion of dopants to convert n+ gate material to p+, and a pulse-doped layer adjacent the two-dimensional carrier gas channels to adjust threshold voltages. Further preferred embodiments have the conductivity-type converted gate (50) containing a residual layer of unconverted n+ which cooperates with the pulse-doped layer threshold shifting to yield threshold voltages which are small and positive for n-channel and small and negative for p-channel devices.