Blue-green laser diode

摘要

A II-VI compound semiconductor laser diode includes a N-type GaAs substrate, a first cladding layer of N-type ZnSSe overlaying the substrate, a first guiding layer of N-type ZnSe semiconductor overlaying the first cladding layer. A quantum well layer of strained CdZnSe semiconductor overlaying the first guiding layer, a second guiding layer of p-type ZnSe semiconductor overlaying the quantum well layer, and a second cladding layer of p-type ZnSSe semiconductor overlaying the second guiding layer.