发明名称 |
PROCESS FOR PRODUCING DEVICES CONTAINING SILICON NITRIDE FILMS |
摘要 |
PROCESS FOR PRODUCING DEVICES CONTAINING SILICON NITRIDE FILMS Silicon nitride regions suitable for applications such as capping layers in integrated circuit fabrication are produced by an advantageous plasma deposition process. This process utilizes a combination of gases, including a silicon-containing gas, a nitrogen-containing gas, a fluorinecontaining gas, and a hydrogen-containing gas. Silicon nitride having a low density of defect states and thus having excellent dielectric properties is produced.
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申请公布号 |
CA1327338(C) |
申请公布日期 |
1994.03.01 |
申请号 |
CA19870553661 |
申请日期 |
1987.12.07 |
申请人 |
AMERICAN TELEPHONE AND TELEGRAPH COMPANY |
发明人 |
CHANG, CHORNG-PING;FLAMM, DANIEL L.;IBBOTSON, DALE E.;MUCHA, JOHN A. |
分类号 |
C01B21/068;C23C16/34;C23C16/50;H01L21/318;(IPC1-7):C23C16/34 |
主分类号 |
C01B21/068 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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