发明名称 |
Semiconductor memory with leak-resistant bit lines |
摘要 |
Each of the bit lines of a semiconductor memory has an intermediate section with low electrical resistance and low electromigration resistance. If the bit line is shorted to a word line, during burn-in the electrical resistance of the intermediate section increases because of electromigration, thereby preventing excess current from leaking through the shorted bit line during subsequent use. |
申请公布号 |
US5291433(A) |
申请公布日期 |
1994.03.01 |
申请号 |
US19920943891 |
申请日期 |
1992.09.11 |
申请人 |
OKI ELECTRIC INDUSTRY CO., LTD. |
发明人 |
ITOH, HIDEKI |
分类号 |
H01L21/8234;G01R31/30;G06F11/20;G11C5/06;H01L21/8242;H01L27/088;H01L27/10;H01L27/11;(IPC1-7):G11C5/06 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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