| 发明名称 |
IMPROVED ALUMINUM(AL) METALLIZATION FOR SEMICONDUCTOR DEVICE |
| 摘要 |
Stress induced grain boundary movement in aluminum lines used as connections in integrated circuits is substantially avoided by doping the aluminum with iron. Through this expedient not only is grain boundary movement avoided but electromigration problems are also decreased. |
| 申请公布号 |
KR940001647(B1) |
申请公布日期 |
1994.02.28 |
| 申请号 |
KR19900016428 |
申请日期 |
1990.10.16 |
| 申请人 |
AMERICAN TELEPHONE & TELEGRAPH CO. |
发明人 |
RYAN, VIVIAN W.;SCHUTZ, RONALD J. |
| 分类号 |
H01L23/52;H01L21/3205;H01L23/532;(IPC1-7):H01L21/320 |
主分类号 |
H01L23/52 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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