| 摘要 |
PURPOSE:To reduce cost and mounting area at the time of packaging by forming an equivalent diode connected in reverse parallel between cathode and anode thereby eliminating the need of a discrete reverse parallel diode being required at the time of AC operation. CONSTITUTION:Impurities having characteristics reverse to those of n-type substrate, i.e., p-type impurities, are diffused in mesh into the rear surface of the n-type substrate on the anode electrode A side thus forming an equivalent diode D in a chip. The diode D is connected in reverse parallel between anode A and cathode K of an insulated gate bipolar transistor. Since a diode connected in reverse parallel between anode A and cathode K is formed equivalently, a discrete diode is not required to be connected reverse parallel at the time of AC operation resulting in reduction of cost and mounting area at the time of packaging. |
