| 摘要 |
PURPOSE:To obtain a high-output semiconductor light-emitting element which can reduce manufacturing cost by providing a buried double hetero structure and by using a a fewer processes, and to obtain the manufacturing method thereof. CONSTITUTION:In a semiconductor light-emitting element, high resistance layers 6 are stacked on a semiconductor substrate 1 of a first conductivity type having a ridge, in such way that the high resistance layers 6 bury both sides of the ridge. Further, the light-emitting element contains semiconductor current- preventing layers 7 of the first conductivity type which are projected by forming an opening on the ridge of the semiconductor substrate 1, a semiconductor optical guide layer 2 of the first conductivity type which is stacked on the ridge of the substrate 1 and surrounded by the current-preventing layers 7, an active layer 3 which is stacked on the optical guide layer 2 and surrounded by the current-preventing layers 7, a semiconductor clad layer 4 of a second conductivity type staked so as to bury the active layer 3 and the current- preventing layers 7, and a semiconductor contact layer 5 of the second conductivity type which is stacked on the clad layer 4. |
