| 摘要 |
PURPOSE:To improve the life of a semiconductor disk device using a flash EEPROM. CONSTITUTION:Two kinds of flash EEPROMs (11-1)-(11-m), (12-1)-(12-n) whose writing units differ from each other coexist and the chips of these flash EEPROMs are selectively used according to the data size of writing data. Consequently, the most suitable chip is selected among the plural kinds of flash EEPROMs (11-1)-(11-m), (12-1)-(12-n) having different writing units so as to be written according to the data size of writing data. Consequently, the life of the whole device is lengthened without lowering the operating speed by effectively utilizing flash EEPROMs having the limit of the number of times for erasing. |
