发明名称 HERMETICALLY SEALED SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To eliminate short-circuit between leads due to dust generated within a cavity and erasing failure or the like of EPROM by providing, in order to form an ultraviolet transmitting window, a transparent resin layer in which a structure material in the cavity including a mount material and a chip or the like is buried. CONSTITUTION:A base 9 and a chip 2 formed by a mount material 4 loaded at the bottom part of a cavity 1 of the base 9 are comprised. A lead 8 which is sealed to the base 9 with a sealing glass 10 and extended to the outside and a bonding wire 5 connecting the lead 8 and the chip 2 are also provided. Moreover, a transparent resin layer 3 in which a structure in the cavity 1 including mount material 4, chip 2, bonding wire 5 and lead 8 is buried is provided to form an ultraviolet transmitting window 7. Thereby, generation of dust particularly from the mount material 4 and generation of short-circuit between leads 8 can be prevented and looseness of wire 5 due to mechanical stress such as vibration or the like and wire opening can also be prevented.</p>
申请公布号 JPH0653359(A) 申请公布日期 1994.02.25
申请号 JP19920202821 申请日期 1992.07.30
申请人 NEC CORP 发明人 NAKAYAMA MASAKATSU
分类号 H01L23/28;(IPC1-7):H01L23/28 主分类号 H01L23/28
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