| 摘要 |
<p>PURPOSE: To provide a high-density semiconductor device, wherein corrosion due to the bird's beaks at LOCOS is removed, the step differences are adjustable, according to the adjustment of the trench depth and thickness of a silicon nitride film and fine elements are formable by adjusting the width of the trench. CONSTITUTION: This manufacturing method comprises forming an insulation layer on a substrate, forming openings for element separating regions, forming spacers 32, 33 having an etching rate different from that of an insulation layer at the sidewalls of the openings to form annular trenches surrounding active regions, forming a separate insulation layer having an etching rate different therefrom, removing the spacers 32, 33 by etching, and filling up the trenches with the same material as that of the former insulation layer to form annular trenches, thus forming element-separating regions.</p> |
