| 摘要 |
PURPOSE: To increase the concentration of a source and a drain structure, and prevent the peeling phenomenon at the time of TiSi2 formation by adding ion implantation for decreasing the concentration of impurity mode of the source and the drain region, before a Ti sputtering process using the same mask. CONSTITUTION: A P-well 3 and an N-well 4 are formed in a substrate 15, a gate oxide film and a gate electrode 7 are formed, ions are implanted, an implantation part 8 is formed, a spacer 9 is formed, and a source and drain region 10 is formed by implanting high concentration N<+> and P<+> ions. After the ions have been diffused by annealing, an oxide film 11 is vapor-deposited, and a contact hole is formed in a part. By implanting BF2 ions in the P-well 3 surface, it is turned into low concentration N-type. By implanting As75 ions, the surface is turned into low concentration P-type. Titanium silicide 16 is formed, a titanium film is eliminated, heat treatment is performed again, a Ti film 13 and an aluminum film 14 are vapor-deposited, a pattern is formed, and metal contact is formed. |
