| 摘要 |
PURPOSE:To eliminate deterioration of hold characteristics caused by a step for forming a fine contact hole connecting between a storage electrode and source drain region of a stacked capacitor type DRAM. CONSTITUTION:A contact hole connecting between a storage electrode and a source drain region is made, a first conductor film 11 and a first coating 12 are laminated sequentially on an interlayer insulation film interposed between the storage electrode and the source drain region, and then the first conductor film 11 and the first coating 12 are etched into a predetermined pattern thus forming a recess 13. A spacer 14 is formed on the inner wall part of the recess and a fine contact hole is made, while surpassing the resolution limit of photolithographic technology, with the first conductor film 11a and the spacer 14 as masks thus ensuring a margin between the contact hole and the source drain region 5-1 while suppressing junction leak current. This constitution enhances hold characteristics. |
