| 摘要 |
PURPOSE:To provide a SRAM cell structure in which operational stability of cell is enhanced by increasing the channel length of a word transistor without increasing cell area and signal can be transmitted through a diffusion layer with no problem. CONSTITUTION:In a SRAM memory cell structure where a word line 7 is laid substantially in the center of a cell and driver transistors 8, 9 are arranged substantially in parallel on the opposite sides thereof, contact part of the gate electrode of the driver transistor is formed on a word transistor which is formed along with the word line. |
