| 摘要 |
<p>PURPOSE:To form phase shifter pattern parts and surface protective parts for light shielding patterns with one time of a photolithographic stage in formation of resist patterns for drying etching of a phase shifter layer. CONSTITUTION:The light shielding patterns 40 are formed on the phase shifter layer 33 and a resist thin film 41 which allows image reversal process from a positive type to a negative type is formed thereon. This resist thin film 41 is exposed with prescribed regions including a part of apertures of the light shielding patterns by ionizing radiations 42 and in succession, post-exposure baking for executing image reversing is executed; thereafter, the resist thin film is subjected to full-surface exposing with the light shielding patterns as a mask by UV light 4 from the rear surface of the substrate so that only the resist of the aperture parts of the unexposed light shielding patterns is made soluble. The resist thin film 41 is then developed, by which resist patterns 45 are formed.</p> |
