INSULATED GATE FIELD EFFECT SEMICONDUCTOR DEVICE AND FABRICATION THEREOF

摘要

PURPOSE:To provide a novel structure for insulated gate field effect semiconductor device and simple fabrication process therefor. CONSTITUTION:In the structure of TFT, an anode oxide film 10 is formed of the same material as a gate electrode 8 around the gate electrode 8, an electrode 7 connected with the source, drain region 3 contacts the top face and side face of the source, drain region, and the electrode 7 connected with the source, drain extends above an oxide deposited around the gate electrode. Fabrication process of TFT requires only two masks.