RESIST STRUCTURE, ION IMPLANTATION, AND MANUFACTURE OF SEMICONDUCTOR DEVICE,申请号JP19920222103-传众专利搜索

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发明名称	RESIST STRUCTURE, ION IMPLANTATION, AND MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要
申请公布号	JPH0653159(A)	申请公布日期	1994.02.25
申请号	JP19920222103	申请日期	1992.07.29
申请人	SONY CORP	发明人	YASUSHIGE HIROAKI
分类号	H01L21/265;H01L21/266;H01L21/822;H01L27/04;(IPC1-7):H01L21/266	主分类号	H01L21/265
代理机构		代理人
主权项
地址

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