| 摘要 |
<p>PURPOSE:To form pixel electrodes having normal constitution with good reproducibility by using extremely simple means. CONSTITUTION:Thin-film transistors are formed on a transparent insulating substrate 1 and after a resist film having patterns for forming the pixel electrodes by a lift-off method, an ITO film of a first layer is formed over the entire surface and thereafter, the resist film is peeled and the ITO film of the first layer is patterned by the lift-off method, by which the pixel electrodes 11A of the first layer are formed. An ITO film of a second layer is then formed and is then etched without using a mask, by which the pixel electrodes 11B of the second layer are formed.</p> |
