| 摘要 |
PURPOSE:To prevent a metal film from growing to an alignment mark part by a method wherein, before the metal film is formed selectively in a contact hole, the alignment mark part is irradiated with an electron beam as an energy beam. CONSTITUTION:Contact holes 12 for electrode formation and an alignment mark 13 which is larger than the holes are opened. Only an alignment part 4 is irradiated with an electron beam 14 in a vacuum. Then, Al is filled into the contact holes 12 by a selective CVD method, and the Al is deposited. On the other hand, an Al deposition reaction is not caused in a region (the alignment mark part 13) which is not terminated by hydrogen and on an interlayer insulating film 11 in which free electrons do not exist. As a result, Al films 15 are deposited selectively inside the contact holes 12 only. Thereby, the alignment accuracy of a metal interconnection pattern is enhanced, a semiconductor device is made fine and its reliability can be enhanced. |
