发明名称 CELL STRUCTURE AND SRAM MEMORY CELL STRUCTURE HAVING THIN FILM TRANSISTOR AND FORMATION THEREOF
摘要 PURPOSE:To provide a cell structure having TFT and formation thereof in which no retriction is imposed on the layout of TFT which can thereby be laid out even if a unit cell is shortened in one direction. CONSTITUTION:In a cell structure comprising a layer constituting a thin film transistor(TFT), a layer constituting at least one transistor other than the TFT, and a TFT having cell structure formed by these transistors, power supply lines 17a, 17a' for TFT are placed at the upper or lower side of a cell and channel parts 17b, 17b' of TFT are formed substantially perpendicular to the power supply lines. The power supply lines are isolated from a contact hole 18 through a dielectric film formed on the side wall of the contact hole.
申请公布号 JPH0653441(A) 申请公布日期 1994.02.25
申请号 JP19920220713 申请日期 1992.07.28
申请人 SONY CORP 发明人 NEGISHI MICHIO
分类号 H01L27/11;H01L21/8244;H01L29/78;H01L29/786 主分类号 H01L27/11
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