THIN FILM TRANSISTOR AND ACTIVE MATRIX LIQUID CRYSTAL DISPLAY

摘要

PURPOSE: To provide a thin film transistor(TFT) active matrix liquid crystal display device of high display quality by forming an insulating layer between one of a source electrode and a drain electrode for a long distance longer than the hole-electron recoupling distance from all edges superposed on a semiconductor layer out of edges of at least one of the source electrode and the drain electrode. CONSTITUTION: When light is thrown in the direction of an arrow 15 with a TFT 1 off, holes and electrons are excited in an area 12, which is not covered with light shielding source and drain electrodes 7 and 8, of a semiconductor layer 5 and are migrated toward the connection area between the source electrode 7 and the semiconductor layer 5 and that between the drain electrode 8 and the semiconductor layer 5. An insulating layer 6 is provided between the semiconductor layer 5 and the source electrode 7 and between the semiconductor layer 5 and the drain electrode 8 for a distance D between these areas and the area. As the result, holes and electronic are coupled again within the distance D and don't reach the source electrode 7 and the drain electrode 8.