Gallium arsenide phosphide epitaxial disc - having layer system of gallium arsenide phosphide and used to mfr. light emitting diodes

摘要

Epitaxial disc made of gallium arsenide phosphide is claimed, in which a gallium arsenide phosphide layer of different mixed crystal ratio, a gallium arsenide phosphide layer of constant mixed crystal ratio, and an N-doped gallium arsenide phosphide layer of constant mixed crystal ratio are formed on a single crystal substrate. The N-doped gallium arsenide phosphide layer has a corner concn. of at most 3 x 10 15 cm-3. USE/ADVANTAGE - To mfr. light emitting diodes. The diodes have a longer service life. In an example, single crystal substrate (1), formed of gallium phosphide single crystal substrate, has a single crystal plane of (100). The gallium phosphide epitaxial layer (2) is a buffer zone and layer (3) is a gallium arsenide phosphide layer of different mixed crystal ratio. Layer (4) is the gallium arsenide phosphide layer of constant mixed crystal ratio, with layer (5) being an N-doped gallium arsenide phosphide layer of constant mixed crystal ratio.