| 摘要 |
The etching solution is characterized in that chromium trioxide (CrO3), hydrofluoric acid (HF), aqueous ammonia (NH4OH) and water (H2O) are mixed in the ratio of 100-500g:1.5l:0.75l;1l in it. The etching solution can conduct etching stably and etch the whole surface of wafer uniformly by reducing the relative ratio of HF by adding NH4OH. And it can be used regardless of wafer direction of (111) or (100). HF does not directly react with silicon (Si) since NH4OH delays the reaction of Si and HF. Stable etching can be secured as HF and NH4OH simultaneously destroy the atomic structure of Si.
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