| 摘要 |
forming a Cr layer selectively on a surface area of a quartz substrate; coating a phase shift layer, a conducting layer, and a photoresist film for electron beam, sequentially; forming a fixed pattern on the photoresist film by electron beam recording and developing, and removing the unnecessary part of the phase shift layer by etching it according to the fixed pattern of photoresist film as a mask; removing the unnecessary part of the Cr layer by etching it with the self aligned mask; and finally removing the photoresist film.
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