| 摘要 |
forming a base oxide layer, a nitride layer, and "N-" layer on a silicon substrate sequentially and removing the base oxide layer; depositing a gate oxide and a high temperature oxidation layer and forming a gate oxide layer (20) under a side-wall spacer (5); in order to form a source and a drain region, forming N+ layer (6) by n+ ion implantation, removing the nitride layer, depositing a gate oxide layer (20) and a gate polycrystalline silicon (12), and finally removing them except the gate region (1).
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