METHOD FOR FABRICATING A LDD TYPE EPROM

摘要

A gate oxide layer (2) and a floating gate poly silicon layer (3a) are formed on a silicon substrate (1) to make a floating gate (3) with a mask pattern process. An inner isolating layer (4) is formed on the floating gate (3) to make a gate poly silicon layer (5a); the gate (5) is fabricated by using the etching process. A source (7) and a drain (7') are constructed by injecting a high density impurity material on the silicon substrate (1). The LDD region (8) is built by injecting a low density impurity material on the substrate (1).