| 摘要 |
Plasma-enhanced magnetron-sputtered deposition (PMD) of materials is employed for low-temperature deposition of hard, wear-resistant thin films, such as metal nitrides, metal carbides, and metal carbo-nitrides, onto large, three-dimensional, irregularly shaped objects (20) without the requirement for substrate manipulation. The deposition is done by using metal sputter targets (18) as the source of the metal and immersing the metal sputter targets (18) in a plasma (16) that is random in direction and fills the deposition chamber (12) by diffusion. The plasma (16) is generated from at least two gases, the first gas comprising an inert gas, such as argon, and the second gas comprising a nitrogen source, such a nitrogen, and/or a carbon source, such as methane. Simultaneous with the deposition, the substrate (20) is bombarded with ions from the plasma (16) by biasing the substrate (20) negative with respect to the plasma (16) to maintain the substrate temperature and control the film microstructure. The substrate (20), metal targets, and plasma (16) are all electrically decoupled from each other and from walls (14) of the deposition chamber (12), so as to provide independent electrical control of each component. The PMD process is applicable not only to the deposition of hard coatings, but also can be applied to any thin film process such as for electrically and thermally conductive coatings and optical coatings, requiring simultaneous, high-flux, ion-bombardment to control film properties. <IMAGE> |
