As-deposited large grain aluminum.

摘要

A metal film, particularly of aluminum or an aluminum alloy, is deposited with a large grain structure at temperatures in the range of 50 DEG C to 250 DEG C by sputtering from a target having a large grain structure in which the average grain size is approximately equal to or greater than 1.0 mm and, preferably with a preferred crystal orientation within the grain structure. The sputtering process preferably includes sputtering across an increased area of the sputtering target by means of directing plasma to the sputtering target with a rotating magnetic field. An exemplary form of the sputtering arrangement having a rotating magnet is shown in the attached Figure. The sputtering chamber (110) is closed by a sputtering target (120) enclosing a wafer (130). A support (160) is provided to support a motor (140) and a magnet (150), driven thereby in close proximity to a sputtering target (160). The magnet (150) is preferably in the form of a specially distorted toroid. The approximate shape shown is preferred since the magnetic field produced thereby is evenly swept radially over the target with angular rotation. The formation of an as-deposited large grain film at a reduced temperature avoids the need for high temperatures during deposition and/or heat treatment such as annealing after the deposition of the metal film. <IMAGE>