发明名称 |
Bipolar transistor memory cell and method |
摘要 |
Bipolar transistor memory cell and method for use in a random access memory. A pair of state elements are cross coupled so that they assume opposite states in accordance with signals applied thereto, a pair of bipolar pass transistors are connected to respective ones of the state elements for applying signals to the state elements, and current flow through the pass transistors is monitored to determine the states of the state elements.
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申请公布号 |
US5289409(A) |
申请公布日期 |
1994.02.22 |
申请号 |
US19930073457 |
申请日期 |
1993.06.07 |
申请人 |
DIGITAL EQUIPMENT CORPORATION |
发明人 |
REINSCHMIDT, ROBERT M. |
分类号 |
G11C11/411;(IPC1-7):G11C11/00;G11C11/34 |
主分类号 |
G11C11/411 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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