| 摘要 |
In doping with amorphous Si, by gas-discharge sepn., (CH3)3P is added to the gas. The concn. of (CH3)3P is 10 power minus 4 -80 (pref. 10-3-1) mols.%. The gas is mono- or di-silane, to which CH4, C2H6 or C2H2 may be added. The gas-discharge is a high frequency discharge, in a flowing gas. USE/ADVANTAGE - The process is used for the prodn. of an electrophotographic recording material with at least 1 layer of amorphous Si (claimed), for the prodn. of diode structures of amorphous Si, of ohmic contacts on such structures, and in solar cells. (CH3)3P is a liq. with b.pt. 38 deg.C, and is safe w.r.t. health. A pre-determined doping concn. can be obtd. |
