发明名称 |
PRODUCTION OF SEMICONDUCTOR DIAMOND |
摘要 |
PURPOSE:To produce p-type or n-type semiconductor diamond by introducing an impurity element for forming donor or acceptor level into diamond in high controllability. CONSTITUTION:A substrate material 101 made of diamond or having a diamond thin film deposited on the substrate is bombarded with accelerated particles 102 and irradiated with ultraviolet ray 104 after or during the bombardment. The damage of diamond is restored and the particles are activated by this treatment. |
申请公布号 |
JPH0648715(A) |
申请公布日期 |
1994.02.22 |
申请号 |
JP19920198590 |
申请日期 |
1992.07.24 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
DEGUCHI MASAHIRO;KITAHATA MAKOTO;HIRAO TAKASHI |
分类号 |
C01B31/06;C30B29/04;H01L21/265;H01L21/268 |
主分类号 |
C01B31/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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